DXXXXXXX N+ N- MNAME <AREA> <OFF> <IC=VD>
Examples:
DBRIDGE 2 10 DIODE1 DCLMP 3 7 DMOD 3.0 IC=0.2
N+ and N- are the positive and negative nodes, respectively. MNAME is the model name, AREA is the area factor, and OFF indicates an (optional) starting condition on the device for DC analysis. If the area factor is omitted, a value of 1.0 is assumed. The (optional) initial condition specification using IC=VD is intended for use with the UIC option on the .TRAN statement, when a transient analysis is desired starting from other than the quiescent operating point.
Diode Model
The diode model is general enough to work for both junction diodes and Schottky barrier diodes. The DC characteristics of the diode are determined by the parameters IS and N. An ohmic resistance, RS, is included. Charge storage effects are modeled by a transit time, TT, and a non-linear depletion layer capacitance which is determined by the parameters CJO, VJ, and M. The temperature dependence of the saturation current is defined by the parameters EG, the energy and XTI, the saturation current temperature exponent. Reverse breakdown is modeled by an exponential increase in the reverse diode current and is determined by the parameters BV and IBV (both of which are positive numbers).
Diode Model Parameters -
| Name | Meaning | Units | Default | Area |
| IS | saturation current | A | 1.0E-14 | * |
| RS | ohmic resistance | W | 0 | * |
| N | emission coefficient | 1 | ||
| ISR | recombination current | A | 0 | |
| NR | emission coefficient for ISR | 2 | ||
| IKF | high-injection knee current | A | infinite | |
| TT | transit-time | s | 0 | |
| CJO | zero-bias junction capacitance | °F | 0 | * |
| VJ | junction potential | V | 1 | |
| M | grading coefficient | 0.5 | ||
| EG | activation energy | eV | 1.11 0.69 Sbd 0.67 Ge | |
| XTI | saturation-current temp. exp | 3.0 2.0 Sbd | ||
| NBV | reverse breakdown ideality factor | 1 | ||
| IBVL | low-level reverse breakdown knee current | A | 0 | |
| NBVL | low-level reverse breakdown ideality factor | 1 | ||
| KF | flicker noise coefficient | 0 | ||
| AF | flicker noise exponent | 1 | ||
| FC | coeff for forward-bias depletion capacitance | 0.5 | ||
| BV | reverse breakdown voltage | V | infinite | |
| IBV | current at breakdown voltage | A | 1.0E-3 | |
| TIKF | IKF temperature coefficient (linear) | °C-1 | 0 | |
| TBV1 | BV temperature coefficient (linear) | °C-1 | 0 | |
| TBV2 | BV temperature coefficient (quadratic) | °C-2 | 0 | |
| TRS1 | RS temperature coefficient (linear) | °C-1 | 0 | |
| TRS2 | RS temperature coefficient (quadratic) | °C-2 | 0 |
* The parameter scales with area.